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From 1994 to 1995 he worked as a Post-Doctoral Fellow at the Micro- and Nanotechnology Research Center of the Danish Technical University, Lyngby, Denmark. degree in physics from the University of Frankfurt, Frankfurt, Germany, in 19, respectively. Who should attend: Technology Development Engineers, Reliability Engineers, Process Engineers, Process Integration Engineers and Managers. The presentation will be followed by a Q&A session where the audience will have the opportunity to get their questions answered by the presenter.
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After discussing the physical models underlying IFM, various examples illustrate its application to state-of-the-art devices. IFM is a proven numerical method previously used for noise analysis and now extended for variability analysis. This webinar presents a methodology for variability analysis at the technology level combining 3D process simulation with a device simulation technique known as Impedance Field Method (IFM). The process variation stems from geometric and doping statistical fluctuations which can be well modeled with TCAD. He is author of book: 3D TCAD Simulation for CMOS Nanoeletronic Devices.As transistor critical dimensions continue to shrink, process variations have a growing impact on device and circuit variability. His research interests include Nanoelectronic MOSFET devices, TCAD simulation and Nonvolatile memory devices. In 2016, he joined the Research and Development department of Taiwan Semiconductor Manufacturing Company (TSMC) after his graduation. degree in Engineering and System Science from National Tsing Hua University in 2015. degree in Engineering and System Science from National Tsing Hua University in 2012, and Ph.D. degree in Physics from National Dong Hwa University in 2010, M.
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He has published 56 international SCI papers on nanoelectronic devices. His research interests include nanoelectronic devices and 3D TCAD simulation, flash memory devices, and solar cells. He teaches 3D CMOS semiconductor nanoelectronic devices by TCAD simulation course for seven years.
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In 2006, he joined the Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan, where he is currently working as an associate professor. From 1998 to 2002, he was an assistant researcher at National Nano Device Laboratories, Hsinchu, Taiwan, where he was primarily engaged in research on single electron transistor and electron beam lithography technology. from National Chiao Tung University, Taiwan, in 2005. degree in Physics from National Taiwan University in 1998, and his Ph.D. degree in Physics from National Central University in 1996, his M.S. Readers are expected to have some preliminary knowledge of the field. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.
TCAD SYNOPSYS HOW TO
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD).